Linear dependence of post-irradiation input bias currents on pre-irradiation values in silicon bipolar microcircuits

We find in experiments a linear dependence of ionization irradiation-induced degradations on pre-irradiation values the input bias current bipolar devices with simple stages. The is found to generally exist all studied cases different device types and irradiation conditions. A unique behavior energy distribution interface states (Dit) under suggested as origin observed phenomenon: generation traps through depassivation SiH bonds located near displays Dit an enlargement initial results general dependence. more accurate damage prediction method by using proposed based phenomenon.